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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Si/Ge

HL 30.4: Talk

Wednesday, March 25, 2009, 10:15–10:30, POT 51

Electronic and transport properties of semiconducting nanoparticles — •Andreas Gondorf1, Martin Geller1, Daniel Tadych1, Axel Lorke1, Cedrik Meier2, and Hartmut Wiggers31Experimental Physics and CeNIDE, University of Duisburg-Essen, Duisburg — 2Department of Physics, University of Paderborn — 3Combustion and Gas Dynamics, University of Duisburg-Essen

We investigate the charge carrier concentration and mobility in Ge and Si nanoparticle pellets. These transport properties are crucial for future Si or Ge based optoelectronic devices, as they determine the conductivity, for instance, in printable electronics. We use current-voltage (I-V) and Hall-measurements and find a very weak but measurable Hall-effect in compressed powder pellets. In pellets based on Si nanoparticles a very low charge carrier concentration of about 1012 cm−3 is measured at 250C while Ge nanoparticles show at 25C two order of magnitude higher concentration of about 4·1014 cm−3. These numbers are comparable to the intrinsic charge carrier concentration in the corresponding bulk materials. Ge nanoparticles have a very small mobility of 0,1 cm2/Vs at 25C which is comparable to the mobility of organic semiconductors. Surprisingly for Si nanoparticles we find mobilities of up to 100 cm2/Vs at 250C which is not understood yet. Furthermore we show a simulation of I-V characteristics of semiconducting nanoparticles embedded in a dielectric matrix. The model includes the size dependent band gap and capacitance and the size distribution of the particles. The simulation is in good agreement with experimental results [C. H. Cho et al. Appl. Phys. Lett. 89 013116 (2006)].

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