Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Si/Ge

HL 30.8: Talk

Wednesday, March 25, 2009, 11:30–11:45, POT 51

Strained delta SiGe Layer for increasing ON current of Tunnel Field Effect Transistors (TFET) — •Helmut Lochner, Peter Iskra, Dorota Kulaga-Egger, Martin Schlosser, Thomas Zilbauer, Torsten Sulima, and Ignaz Eisele — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

To meet the high demands of process and information technology the semiconductor industry gets into problems in the development of new devices. Continuous downscaling leads to increasing importance of quantum mechanical effects, such as the band to band tunnelling mechanism which has to be avoided or reduced in standard CMOS technology. Instead of avoiding the Tunnel Field Effect Transistors (TFET) uses this tunnel current as an advantage, but the ON current cannot fulfil the International Technology Roadmap for Semiconductors. We attempt to adjust this demerit for example by band gap engineering. We fabricated vertical TFETs in silicon with different silicon-germanium delta layers grown epitaxially in a Centura Cluster Tool by means of LPCVD. The device structure is a common p-i-n diode with gated intrinsic layer. To distinguish the influences of strained silicon-germanium we varied the strain in the interface layers between the intrinsic channel and source or drain respectively by different germanium concentrations. The experimental I-V characteristics show the advantages of these SiGe delta layers. The subthreshold slope increases clearly and the ON current considerably. The theoretical border will be shown in simulations.