Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Quantum wires: preparation and characterization
HL 33.10: Vortrag
Mittwoch, 25. März 2009, 16:45–17:00, BEY 81
Local electrical analysis of a single semiconductor nanowire by Kelvin probe force microscopy — •Sasa Vinaji1, André Lochthofen1, Wolfgang Mertin1, Ingo Regolin2, Christoph Gutsche2, Kai Blekker2, Werner Prost2, Franz Josef Tegude2, and Gerd Bacher1 — 1Werkstoffe der Elektrotechnik & CeNIDE, Universität Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany — 2Halbleitertechnologie & CeNIDE, Universität Duisburg-Essen, Lotharstr. 55, 47048 Duisburg, Germany
Semiconductor nanowires open a wide range of innovative electronic and optoelectronic applications. For future device design a detailed knowledge of the local electrical potential is essential. This can be easily accessed by non-contact Kelvin Probe Force Microscopy (KPFM) without damaging the fragile nanowire.
Single GaAs nanowires grown by metal-organic vapour phase epitaxy have been investigated with KPFM. In order to prove the efficiency of p-type doping by ion implantation of Zn [1], the local voltage drop across a biased nanowire was measured quantitatively. From the resistance of the nanowire found, an effective carrier concentration of 6*10^17 cm^-3 could be estimated. Alternatively, a GaAs nanowire was doped during growth with Si and C for n- and p-type doping, respectively. We could localize the doping transition inside the nanowire via KPFM measurements and found a depletion zone of about 350 nm.
[1] D. Stichtenoth, K. Wegener, C. Gutsche, I. Regolin, F. J. Tegude, W. Prost, M. Seibt and C. Ronning, Appl. Phys. Lett. 92, 163107 (2008)