Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 33: Quantum wires: preparation and characterization

HL 33.11: Talk

Wednesday, March 25, 2009, 17:00–17:15, BEY 81

Ion Beam Induced Alignment of Semiconductor Nanowires — •Christian Borschel¹, Raphael Niepelt¹, Sebastian Geburt¹, Christoph Gutsche², Ingo Regolin², Werner Prost², Franz-Josef Tegude², Daniel Stichtenoth³, Daniel Schwen⁴, and Carsten Ronning¹ — ¹Institute for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany — ²Institute for Semiconductor Technology, University of Duisburg-Essen, Lotharstraße 55, 47057-Duisburg, Germany — ³II. Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — ⁴Department of Materials Science and Engineering, University of Illinois @ Urbana-Champaign, 1304 W. Green St., Urbana, IL 61801, USA

GaAs nanowires were grown on top of <100> GaAs substrates, mainly adopting the epitaxial relation and thus growing with an angle of about 35^∘ off the substrate surface. These perfectly straight nanowires were irradiated with different kinds of energetic ions. Depending on ion species, energy, and fluence, we observed that the nanowires bended down towards the surface or up. The intensity of the bending increased with ion fluence. In the case of upwards bending, alignment of the nanowires along the incident ion beam direction could be achieved. The experiments have been simulated to obtain vacancy and interstitial distributions using a special version of TRIM, which accounts for the geometry of the nanowires. The simulated distributions indicate vacancy and interstitial formation within the implantation cascade as the key mechanism for bending.