Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 33: Quantum wires: preparation and characterization

HL 33.5: Vortrag

Mittwoch, 25. März 2009, 15:15–15:30, BEY 81

Local droplet etching of nanoholes and semiconductor quantum rings — •Christian Heyn, Andrea Stemmann, and Wolfgang Hansen — Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg

Local droplet etching (LDE) is a very interesting technique which allows the patterning of semiconductor surfaces without any lithographic steps. In particular, the fabrication of deep nanoholes [1,2] and the generation of semiconductor quantum rings [2] has been demonstrated. The LDE technique is related to the droplet epitaxy, where at first liquid Ga droplets are formed on crystalline surfaces in a Volmer-Weber-like growth mode which in a subsequent step are crystallized under As pressure. As a main difference, during LDE, significantly higher temperatures are used at which nanoholes at the interface between the liquid droplets and the surface are formed by local etching. Furthermore, distinct walls surrounding the nanohole openings are crystallized from droplet material [2] and act as semiconductor quantum rings with tunable size and composition. This presentation gives an overview on the LDE technique and the influence of the process parameters on nanohole and wall structural properties.

[1] Zh. M. Wang, B. L. Liang, K. A. Sablon, and G. J. Salamo, Appl. Phys. Lett. 90, 113120 (2007).

[2] A. Stemmann, Ch. Heyn, T. Köppen, T. Kipp, and W. Hansen, Appl. Phys. Lett. 93, 123108 (2008).