Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 33: Quantum wires: preparation and characterization

HL 33.7: Talk

Wednesday, March 25, 2009, 15:45–16:00, BEY 81

Catalyst free selective area MBE growth of InN nanocolumns on Si — •Boris Landgraf, Christian Denker, Joerg Malindretos, and Angela Rizzi — IV. Physikalisches Institut, Georg-August Universität Göttingen, 37077 Göttingen, Germany

Nowadays InN nanocolumns (NCs) are studied for many possible applications, e.g. as single devices - nanowire transistors - as well as ensembles in solar cells. A size and position controlled growth of nanocolumns is highly desirable. It allows a detailed study and optimization of the growth mechanism and is mandatory for the growth of axial and radial heterostructures. To maintain the high purity of MBE grown nanocolumns a catalyst free approach is preferable.

The selective area MBE growth of InN NCs has been investigated by using various masking materials. Electron beam lithography is applied to pattern the material masks with different layouts in order to determine the diffusion length of the indium on the respective materials. Subsequently nanocolumns were grown on the patterned substrates. It will be shown that the size and position of the InN nanocolumns can be controlled by the use of appropriate mask patterns and materials.