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14:00 |
HL 35.1 |
Crystal length dependency of the generation of the second harmonic with non-diffraction limited radiation — •Mirko Uebernickel, Gunnar Blume, Christian Fiebig, Katrin Paschke, Bernd Eppich, Reiner Güther, and Götz Erbert
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14:15 |
HL 35.2 |
Metallorganische Gasphasenepitaxie von AlInN/GaN Bragg-Spiegeln — •Pascal Moser, Armin Dadgar, Christoph Berger, Jürgen Bläsing, Thomas Hempel und Alois Krost
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14:30 |
HL 35.3 |
Lasing of the direct bandgap material Ga(NAsP) pseudomophically grown on Si(001)-substrate — •Sven Liebich, Bernardette Kunert, Igor Németh, Steffen Zinnkann, Andreas Beyer, Rafael Fritz, Christoph Lange, Niko S. Köster, Daniel J. Franzbach, Sangam Chatterjee, Wolfgang W. Rühle, Nils C. Gerhardt, Nektarious Koukourakis, Martin Hofmann, Kerstin Volz, and Wolfgang Stolz
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14:45 |
HL 35.4 |
Power limiting effects in 2.X µm emitting GaSb-based Diode-Lasers — •Markus Müller, Marcell Rattunde, Johannes Schmitz, Gudrun Kaufel, and Joachim Wagner
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15:00 |
HL 35.5 |
Electrically pumped organic Microcavity-GaN-Hybrid System — •Robert Brückner, Maik Langner, Daniel Kasemann, Hartmut Fröb, Vadim Lyssenko, and Karl Leo
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15:15 |
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15 min. break
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15:30 |
HL 35.6 |
Time-resolved lasing-characteristics of external-cavity quantum-cascade (EC-QC) lasers emitting around 7.4 µm — •Borislav Hinkov, Frank Fuchs, Wolfgang Bronner, Klaus Köhler, and Joachim Wagner
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15:45 |
HL 35.7 |
The Role of Decoupled Electron and Hole Dynamics in the Turn-on Behavior of Semiconductor Quantum-Dot Lasers — •Kathy Lüdge, Ermin Malić, and Eckehard Schöll
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16:00 |
HL 35.8 |
GaAs-based high power tapered amplifiers in an external cavity setup for frequency doubling — •Christian Schilling, Ralf Ostendorf, Gudrun Kaufel, Rudolf Moritz, Hans-Joachim Wagner, and Oliver Ambacher
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16:15 |
HL 35.9 |
Single mode emitting GaInAsSb/GaSb quantum well lasers operating in continuous wave mode at 3.02 µm — •Thomas Lehnhardt, Michael Hümmer, Karl Rößner, Mirjam Müller, Sven Höfling, and Alfred Forchel
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16:30 |
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15 min. break
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16:45 |
HL 35.10 |
Optically pumped GaSb-based semiconductor disk lasers emitting in the 2.0 - 2.8 µm wavelength range — •Rüdiger Moser, Benno Rösener, Marcel Rattunde, Christian Manz, Klaus Köhler, and Joachim Wagner
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17:00 |
HL 35.11 |
Single Mode Quantum Dot Tapered Lasers — •Pia Weinmann, Bjoern Lekitsch, Christian Zimmermann, Emil-Mihai Pavelescu, Johann-Peter Reithmaier, Martin Kamp, and Alfred Forchel
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17:15 |
HL 35.12 |
Towards green lasing: polar and nonpolar — •Alexander Daniel Dräger, Holger Jönen, Uwe Rossow, Heiko Bremers, David Schenk, Pierre Demolon, Jean-Yves Duboz, Brian Corbett, and Andreas Hangleiter
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17:30 |
HL 35.13 |
Spin-relaxation measurements in VCSEL-structures at room temperature — •Hendrik Jähme, Mingyuan Li, Stephan Hövel, Nils C. Gerhardt, Martin R. Hofmann, A. Kroner, and R. Michalzik
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