Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Semiconductor Laser

HL 35.10: Vortrag

Mittwoch, 25. März 2009, 16:45–17:00, BEY 154

Optically pumped GaSb-based semiconductor disk lasers emitting in the 2.0 - 2.8 µm wavelength range — •Rüdiger Moser, Benno Rösener, Marcel Rattunde, Christian Manz, Klaus Köhler, and Joachim Wagner — Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany

Semiconductor disk lasers, also known as vertical-external-cavity surface-emitting laser (VECSEL), combine the wavelength versatility and efficiency of diode lasers with the capability of a high output power to be emitted in a nearly diffraction-limited circular beam inherent to solid-state lasers. In the wavelength range between 2 - 3 µm there is a considerable demand for compact high brightness lasers, serving e.g. medical application, material processing or long-range chemical sensing (LIDAR).
In this presentation we report on the development of high-power GaSb-based VECSELs emitting in the 2.0 - 2.8 µm range. By way of barrier pumping with fiber-coupled diode lasers at 980 nm, a maximum cw output power of e.g. 2.8 W at 2.0 µm was obtained at 20 ^∘C heat sink temperature in multi mode operation with a typical spectral width in the range of 10 nm. The optical power conversion efficiency was 18.6 %, corresponding to a quantum efficiency of 37 %. Single longitudinal mode operation was achieved by using an intracavity birefringent quartz plate. By rotating this plate, a tuning range of 118 nm was achieved. Further, results on longer wavelength VECSEL emitting at around 2.8 µm will be presented.