Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: ZnO: preparation and characterization II

HL 36.3: Talk

Wednesday, March 25, 2009, 14:30–14:45, POT 51

Properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering — •Achim Kronenberger, Marc K. Dietrich, Steve Petznick, Andreas Laufer, Angelika Polity, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

In the 1950s E. Mollwo [1] observed the effect that hydrogen diffused into ZnO single crystals strongly decreases their resistivity. About 50 years later the forming of shallow donor levels due to hydrogen incorporation in ZnO was described theoretically by C. G. Van de Walle [2] and experimentally proved by several groups [3,4]. In our work hydrogen doped thin films have been prepared by radio frequency magnetron sputtering at different substrate temperatures using hydrogen and oxygen as reactive gases. The incorporation of hydrogen was quantified by secondary ion mass spectrometry and its influences on the structural, electrical and optical film properties have been investigated. By varying the deposition parameters we were able to adjust the electrical properties between semiconductor like and degenerated (highly conductive) behaviour for films deposited at room temperature.

[1]E. Mollwo, Z. Phys. 138 (1954) 478. [2]C. G. Van de Walle, Phys. Rev. Lett. 85 (2000) 1012. [3]D. M. Hofmann, A. Hofstaetter, F. Leiter, H. J. Zhou, F. Henecker, B. K. Meyer, S. B. Orlinskii, J. Schmidt, P. G. Baranov, Phys. Rev. Lett. 88 (2002) 045504. [4]S. F. J. Cox, E. A. Davis, S. P. Cottrell, P. J. C. King, J. S. Lord, J. M. Gil, H. V. Alberto, R. C. Vila*o, J. Piroto Duarte, N. Ayres de Campos, A. Weidinger, R. L. Lichti, and S. J. C. Irvine, Phys. Rev. Lett. 86 (2000) 2601.