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HL: Fachverband Halbleiterphysik

HL 36: ZnO: preparation and characterization II

HL 36.7: Vortrag

Mittwoch, 25. März 2009, 15:45–16:00, POT 51

Nitrogen doping of ZnO — •Michael Hofmann¹, Melanie Pinnisch¹, Andreas Laufer¹, Sebastian Zöller¹, Sebastian Eisermann¹, Stefan Lautenschläger¹, Bruno K. Meyer¹, Gordon Callison², Markus R. Wagner², and Axel Hoffmann² — ¹Ist physics insitute, Justus Liebig University Gießen — ²institute for semiconductor physics, Hardenbergstraße, Berlin

The controlled incorporation of acceptors into the ZnO matrix is still a not well understood obstacle for the fabrication of bipolar ZnO devices. We investigated the incorporation of nitrogen using low groth temperatures, different nitrogen percursors and polar or non polar ZnO surfaces. To characterize our thin films we used Raman spectroscopy, low temperature photoluminescence and secondary ion mass spectrometry measurements. It turned out that certain conditions, especially substrate polarity and temperature, favour the nitrogen incorporation.