Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 37: ZnO: devices

HL 37.5: Vortrag

Mittwoch, 25. März 2009, 17:30–17:45, POT 51

Inverter Structures based on Zinc Oxide — •Friedrich Schein, Heiko Frenzel, Alexander Lajn, Gisela Biehne, Holger Hochmuth, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig

The increased interest in wide bandgap semiconductors in the last years is partially due to lots of potential applications in transparent electronics. Zinc oxide is a promising candidate for the fabrication of such transparent devices, e. g. for diodes and transistors. Recent investigations of ZnO-based transistors mostly considered metal-insulator-semiconductor field-effect transistors (MISFETs), suffering from low field-effect mobility and high switching voltages. In this study metal-semiconductor FETs (MESFETs) are used [1]. They possess a higher channel mobility and with that faster switching speeds. Furthermore typical MESFET switching voltages of ± 1 V are about one order of magnitude smaller than for MISFETs, yielding less power consumption. The transistor’s switching performance can be determined using ring oscillator structures, consisting of inverters. In this work, we use Schottky diodes and MESFETs, both based on ZnO thin films grown by pulsed-laser deposition, to fabricate inverter structures. These are known from GaAs technology as Schottky-diode FET logic. The electrical properties including on-off ratio, steepness and transfer characteristic are investigated. Further the integration, necessary for the fabrication of ring oscillators, is discussed.

[1] Frenzel et al., Appl. Phys. Lett., 92, 192108 (2008)