Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 39: Quantum dots: Optical and transport properties

HL 39.6: Vortrag

Donnerstag, 26. März 2009, 11:00–11:15, BEY 81

Application of an eight-band k·p-model to study III-nitride semiconductor nanostructures — •Oliver Marquardt, Tilmann Hickel, and Jörg Neugebauer — Max-Planck-Institut für Eisenforschung

The eight band k·p-formalism is a well established continuum approach for investigations of the electrooptical properties of direct band gap material nanostructures. Though being unable to directly describe atomistic effects, in a previous study this approach has been shown to be in excellent agreement with atomistic methods for III-nitride nanostructures with characteristic dimensions of a few nanometers [1]. We applied our plane-wave implementation of an eight-band k·p-Hamiltonian to study various zero-, one- and two-dimensional nanostructures in the common zincblende and wurtzite crystal structures including effects arising from strain and polarization in order to understand light emission processes in realistic nanostructures. Special attention is paid to the investigation of alloy composition as well as strain and polarization effects on charge carrier localization and binding energies in InGaN/GaN quantum dots and films.

[1]: Marquardt, Mourad, Schulz, Hickel, Czycholl, Neugebauer, Phys. Rev. B, in print (2008)