Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 4: II-VI semiconductors

HL 4.9: Vortrag

Montag, 23. März 2009, 12:30–12:45, POT 51

Homo- and heteroepitaxial growth of ZnS — •Udo Roemer, Stefan Lautenschlaeger, Sebastian Eisermann, Oliver Graw, Joachim Sann, Melanie Pinnisch, Andreas Laufer, and Bruno K. Meyer — Ist phisics institute, Justus Liebig University Gießen

ZnS in its zincblende structure has a direct bandgap of 3.6 eV at room temperature. As material for optoelectronic applications it possesses some advantages, for example the absence of crystal fields or piezoelectricity, compared to GaN or ZnO. So far there are only a handful of publications dealing the ZnS thin film growth, up to this work no homoepitaxial growth approach has been studied. We used both, ZnS single crystal substrates and GaP single crystal substrates to investigate the CVD growth of ZnS thin films. The grown epilayers have been studied using low temperature photoluminescence (PL), X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectroscopy (SIMS).