Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 40: ZnO: preparation and characterization III

HL 40.11: Talk

Thursday, March 26, 2009, 12:30–12:45, BEY 118

Space charge spectroscopy applied to epitaxial ZnO — •Florian Schmidt¹, Holger von Wenckstern¹, Matthias Schmidt¹, Christian Borschel², Carsten Ronning², and Marius Grundmann¹ — ¹Universität Leipzig, Institut für Experimentelle Physik II — ²Friedrich Schiller Universität Jena, Institut für Festkörperphysik

One advantageous material property of the wide band-gap II-VI semiconductor ZnO is it’s higher radiation hardness compared to the most commonly used semiconductor materials Si and GaAs, respectively. Nevertheless, certain defects are introduced by radiation, implantation or even contact metal deposition. For systematic investigations we used pieces of a single 2 inch ZnO thin film grown by pulsed-laser deposition. To study the influence of the contact metal the thin films were used in their as-grown state. The introduction rate of intrinsic defects is determined for argon-ion implanted thin films. All samples were investigated by depth-resolved cathodoluminescence and space charge spectroscopic methods.