Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 40: ZnO: preparation and characterization III

HL 40.4: Vortrag

Donnerstag, 26. März 2009, 10:15–10:30, BEY 118

The 3.367eV band in ZnO — •Martin Feneberg, Anton Reiser, Christian M. Krauß, Rolf Sauer, and Klaus Thonke — Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm

Low temperature photoluminescence experiments in ZnO show frequently a band at 3.367eV, which is broad and overlaps with the sharp bound exciton lines. This feature has been explained as being due to so-called surface excitons, e.g. excitons bound to defects that are located close to the surface of the semiconductor. Here, we show that an excitonic origin of the 3.367eV band is unlikely and instead give an explanation in terms of donor-to-surface acceptor transitions consistent with data reported in the literature.