Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 40: ZnO: preparation and characterization III
HL 40.8: Talk
Thursday, March 26, 2009, 11:30–11:45, BEY 118
Defect spectroscopy of homoepitaxial ZnO thin films — •Holger von Wenckstern, Alexander Lajn, Matthias Brandt, Christof Dietrich, Gabriele Benndorf, Michael Lorenz, Gisela Biehne, Holger Hochmuth, and Marius Grundmann — Universität Leipzig, Abteilung Halbleiterphysik, Institut für ExperimentellePhysik II
Homoepitaxially grown ZnO thin films exhibit compared to heteroepitaxial thin films a superior structural quality and a lower defect density [1].
In this work nominally undoped ZnO thin films, grown at various oxygen partial pressures by pulsed laser deposition on thermally pretreated hydrothermally
grown ZnO single crystal substrates are investigated. Atomic force microscopy and high resolution X-ray diffraction were carried out to determine the morphological and structural properties of the ZnO thin films. Schottky contacts have been fabricated on the thin films by reactive sputtering of Pt. The barrier heights are ≥ 0.6 eV, yielding, despite the low substrate conductivity, rectification ratios of up to 102. This permits the application of space charge layer based defect spectroscopy. We correlate electronic properties measured by photoluminescence at 2 K with thermal admittance spectroscopy results and the growth parameters.
H. v. Wenckstern et al.: phys. stat. sol. (RRL) 1,129 (2007).