Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 41: GaN: preparation and characterization II

HL 41.1: Vortrag

Donnerstag, 26. März 2009, 09:30–09:45, BEY 154

Growth delay in GaInN/GaN multi quantum wells — •Heiko Bremers, Lars Hoffmann, Holger Jönen, Uwe Rossow, and Andreas Hangleiter — TU Braunschweig, Institut für Angewandte Physik Mendelssohnstr. 2, 38106 Braunschweig

We have grown MQW (multi quantum well) structures under different growth conditions in a MOVPE reactor (AIXTRON 200RF). The combination of high resolution x-ray diffraction with TEM measurements allow the determination of structural parameters of the layered system. By a systematic variation of thickness of QW and V/III ratio we have observed a growth delay in period length (i.e. QW + barrier thicknss). This growth delay of 70 s relates to missing thickness of approximately 1 nm. Based on the obsevation that the TMI (tri methyl indium) flux exhibits a linear relationship with the period length as well as to the indium concentration in the QW we will try to present a model which explains the origin of this growth delay. Finally we will compare these results to PL measurements.