Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 41: GaN: preparation and characterization II
HL 41.6: Talk
Thursday, March 26, 2009, 11:00–11:15, BEY 154
Defect-related cathodoluminescence in ELOG GaN structures — •Ingo Tischer1, Martin Schirra1, Martin Feneberg1, Rolf Sauer1, Klaus Thonke1, Thomas Wunderer2, and Ferdinand Scholz2 — 1Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm
Defect-related luminescence was studied in a sample having selectively overgrown triangular shaped GaN stripes with stable {1101} facets. This sample was intentionally grown under unfavourable conditions in order to provoke a high density of light emitting structural defects. Spatially resolved cathodoluminescence of both the semi-polar {1101} facets and the cross section was recorded. Different emission bands between 3.16 and 3.35eV were observed and systematically investigated using monochromatic CL images and CL linescans with low electron excitation energies to push the spatial resolution to the limit of 40nm. Some of the spectral features are complementary to each other, while others appear commonly in certain regions. A detailed discussion of the spectral and spatial distribution of these defect-related transitions and their possible structural origin will be presented.