Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.20: Poster

Thursday, March 26, 2009, 15:00–17:30, P2

Electroluminescence from silicon nanoparticle layers — •Jens Theis¹ and Cedrik Meier² — ¹Experimental Physics, University of Duisburg-Essen, Duisburg — ²Group Nanophotonics and Nanomaterials, Department of Physics, University of Paderborn

We have fabricated an electroluminescence devices using silicon nanoparticles as an emitter by using a micropatterned GaAs heterostructure as a template. The Si nanoparticles have been fabricated from the gas phase in a low-pressure microwave plasma using SiH4 as a precursor. The nanoparticles have been dispersed onto the patterned GaAs sample from an aqueous solution. For carrier injection, the sample has been placed in a capacitor-like structure, where a transparent oxide layer served as the top-electrode. By applying an AC-voltage, field-emission of electrons and holes from the electrodes leads to electron-hole pairs in the nanoparticles. Thus, optical emission from both Si nanoparticles and GaAs is observed. We study the influence of various parameters on the electroluminescence, such as waveform, frequency and amplitude.