Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.31: Poster

Thursday, March 26, 2009, 15:00–17:30, P2

Transverse Peltier effect in Pb−Bi₂Te₃ multilayer structures — •Christina Reitmaier, Franziska Walther, Amir Kyarad, and Hans Lengfellner — University of Regensburg, 93040 Regensburg, Germany

Metal-semiconductor multilayer structures show, according to model calculations, large anisotropy in their electrical and thermal transport properties. Multilayer stacks consisting of alternating layers of Pb and n-type Bi₂Te₃ and prepared by a heating procedure displayed large thermoelectric anisotropy up to Δ S ≈ 200 µ V/K, depending on the thickness ratio p = d_BiTe/d_Pb, where d_BiTe and d_Pb are the thicknesses of Bi₂Te₃ and Pb layers, respectively. From multilayer stacks, tilted samples with layers inclined with respect to the sample surface where obtained by cutting stacks obliquely to the stack axis. Non-zero off-diagonal elements in the Seebeck-tensor describing the thermopower of tilted samples allow for the occurance of a transverse Peltier effect. Experimental results demonstrate cooling by the transverse Peltier effect and are compared to model calculations.