Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.43: Poster

Thursday, March 26, 2009, 15:00–17:30, P2

HSQ e-beam lithography for ultrasmall single electron transistors on SOI — •Walter Daves, Matthias Ruoff, Monika Fleischer, David A. Wharam, and Dieter P. Kern — Institut für Angewandte Physik, Eberhard Karls Universität Tübingen

Single electron transistors (SETs) are a widely investigated alternative to MOSFET devices for sub-10 nm regime because of outstanding properties such as low power consumption and huge scaling potential. In this work SET devices on Silicon on Insulator (SOI) substrate were fabricated, using electron beam lithography (EBL) with Hydrogen Silsesquioxane (HSQ) as a high-resolution negative resist. The developed HSQ patterns were directly transferred into the active Si layer by Reactive Ion Etching (RIE). Geometric constriction sizes in the sub-10 nm range and dot diameters between 20 and 30 nm were achieved without the need of further oxidation of the nanostructures. Transport measurements on the fabricated SET devices showed clear blockade characteristics at room temperature. This process represents thus a promising candidate for efficient fabrication of SET devices operating at high temperatures.