Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.44: Poster

Thursday, March 26, 2009, 15:00–17:30, P2

Selective molecular epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates — •Mathieu Helfrich and Daniel M. Schaadt — Institut für Angewandte Physik/DFG-Center for Functional Nanostructures (CFN), Universität Karlsruhe (TH), 76128 Karlsruhe, Germany

To successfully integrate quantum dot structures into optoelectronic devices and for possible future applications such as quantum computing it is crucial to control different parameters in the formation of quantum dots. It has been shown that size, shape and distribution of quantum dots can be influenced by patterning the substrate on which the quantum dots are formed. Nonetheless, the mechanisms to control the formation by pre-patterning are not fully investigated yet. In our work we grow self-assembled InAs quantum dots on pre-patterned GaAs (100) substrates by molecular beam epitaxy. The substrates are pre-structured by electron beam lithography. We focus on the pre-patterning of substrates and study the influence of various growth parameters and post-growth treatment. The aim is to achieve good size and shape homogeneity. Scanning electron microscopy, atomic force microscopy and photo-luminescence measurement techniques are used to analyse the quality of the grown quantum dots.