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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.74: Poster

Thursday, March 26, 2009, 15:00–17:30, P2

Sputter deposition of Cu2O thin films from oxidic targets — •Swen Graubner, Daniel Reppin, Angelika Polity, Detlev Hofmann, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen

Cu2O is an intrinsic p-type semiconductor with energy of the band gap in the visible spectral range. Thus it is considered to be a promising material for thin film solar cell applications. Our approach is to deposit Cu2O films using ceramic targets and to explore the parameter space in comparison to the deposition from metallic targets. The first step was to develope a sinter technique to produce a stoichiometric and stable sputter target. We deposited layers using this ceramic target by a RF sputter process. Morphological investigations of the films by x-ray diffraction (XRD) show a strong Cu2O <200> reflex. Carrier concentrations were determined by Hall-measurements to 1013−1014 cm−3. The use of oxygen as reactive sputter gas leads to higher carrier concentrations, a direct and forbidden bandgap of 1,9 to 2,0 eV and an improved morphological quality. Oversized O2 flows lead to the formation of CuO thin films. Using a nitrogen/argon mixture as sputter gas changes the electrical and morphological properties.

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