Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.74: Poster

Thursday, March 26, 2009, 15:00–17:30, P2

Sputter deposition of Cu₂O thin films from oxidic targets — •Swen Graubner, Daniel Reppin, Angelika Polity, Detlev Hofmann, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen

Cu₂O is an intrinsic p-type semiconductor with energy of the band gap in the visible spectral range. Thus it is considered to be a promising material for thin film solar cell applications. Our approach is to deposit Cu₂O films using ceramic targets and to explore the parameter space in comparison to the deposition from metallic targets. The first step was to develope a sinter technique to produce a stoichiometric and stable sputter target. We deposited layers using this ceramic target by a RF sputter process. Morphological investigations of the films by x-ray diffraction (XRD) show a strong Cu₂O <200> reflex. Carrier concentrations were determined by Hall-measurements to 10¹³−10¹⁴ cm⁻³. The use of oxygen as reactive sputter gas leads to higher carrier concentrations, a direct and forbidden bandgap of 1,9 to 2,0 eV and an improved morphological quality. Oversized O₂ flows lead to the formation of CuO thin films. Using a nitrogen/argon mixture as sputter gas changes the electrical and morphological properties.