Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.79: Poster
Donnerstag, 26. März 2009, 15:00–17:30, P2
Surface Modification of ZnO-Films as Transparent Conductive Oxide Layer for Silicon Thin Film Solar Cells — •Florian Lükermann1, Viola Mönkemöller1, Armin Brechling1, Marc Sacher1, Ulrich Heinzmann1, Henning Kurz2, Frank Hamelmann2, and Helmut Stiebig2 — 1Molecular and Surface Physics, Bielefeld University, Germany — 2Malibu GmbH, Bielefeld, Germany
Transparent conductive oxides are used as front electrode in thin film solar cells. Especially ZnO deposited by Low Pressure Chemical Vapor Deposition provides useful features for solar cells. On the one hand ZnO shows a good conductivity and on the other hand a rough surface consisting of pyramidal grains which possess a good light scattering capability.[1]
To influence this light scattering, two different kinds of treatments have been applied on the ZnO surface: etching with diluted HCl and Reactive Ion Etching with Ar and O2. The main interest is focused on the change of surface morphology and the resulting changes in light scattering and transmission. HCl etching leads to an increasing surface roughness as well as diffuse transmittance. Ar/O2 bombardment decreases the roughness and thus the scattering. The lowered roughness enhances the growth of the a-Si absorber layer and reduces the formation of pinholes. Finally the properties of amorphous silicon solar cells deposited on treated ZnO-films are compared with those deposited on untreated films.
Addonizio et al., Proc. of the 22nd EPVSEC, 2129 (2007).