Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.87: Poster
Thursday, March 26, 2009, 15:00–17:30, P2
Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide — •Christian Denker1, Boris Landgraf1, Henning Schuhmann1, Jaime Segura-Ruiz2, Maribel Gomez-Gomez2, Joerg Malindretos1, Michael Seibt1, Andres Cantarero2, and Angela Rizzi1 — 1IV.Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany — 2Materials Science Institute, University of Valencia, 46980 Paterna (Valencia), Spain
Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells.
InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.