Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.8: Poster

Donnerstag, 26. März 2009, 15:00–17:30, P2

Photocapacitance measurements on MOS light emitting devices — •Michael Seeger, Danilo Bürger, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, and Heidemarie Schmidt — Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)

The photocapacitance (PC) has been probed on MOS diodes with an Eu-implanted SiO₂ layer. In general, rare earth implanted SiO₂ layers in MOS diodes are of great interest for possible applications in integrated metal-oxide-semiconductor light emitting devices (MOSLEDs). For example, green and ultraviolet electroluminescence has been probed on SiO₂:Tb-MOSLEDs and SiO₂:Gd-MOSLEDs, respectively. MOSLEDs reach external quantum efficiencies between 1% and 16%, and the electroluminescence peaks are typically ascribed to 4f-intrashell transitions of trivalent rare earth ions. A clear capacitance change has been observed for different wavelengths under monochromatic illumination. Some of the detected peaks correspond to the energies of 4f-intrashell transitions of the Eu ions. According to this, the number of active luminescence centers in MOSLEDs may be determined from PC measurements. Some 4f-intrashell transitions have been also observed by means of electroluminescence measurements on the same MOSLEDs. To emphasize the physical significance of the PC data recorded on SiO₂:Eu-MOSLEDs, we also compare PC data recorded on different MOSLEDs implanted with other rare earth ions.