Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.9: Poster

Donnerstag, 26. März 2009, 15:00–17:30, P2

Experimental investigation of InN-based terahertz surface emitters — •Jan Wallauer, Hanspeter Helm, and Markus Walther — Department of Molecular and Optical Physics, University of Freiburg

Owing to its characteristic material properties, such as a strong optical absorption, a small band gap, and its unusual band structure, indium nitride (InN) promises a much stronger terahertz emission than present terahertz surface emitters [1]. This makes InN to a very promising terahertz radiation source, suitable for potential applications in research and industry. Here we investigate photo-induced terahertz surface emission from epitactically grown InN. Our study is based on femtosecond laser pulse excitation and broadband terahertz detection [2]. By systematically varying the excitation conditions we aim to characterize and optimize the emitted terahertz radiation. The influence of various parameters, such as laser spot size or excitation angle are discussed. Our results for InN are compared with the emission from standard surface emitters like indium arsenide (InAs).

[1] V. Cimalla et al., Phys. Stat. Sol. (b) 244, 1829 (2007)

[2] C. Winnewisser, P. Uhd Jepsen, M. Schall, V. Schyja, and H. Helm, Appl. Phys. Lett. 70, 3069 (1997)