Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: Quantum dots: preparation and characterization
HL 49.6: Vortrag
Freitag, 27. März 2009, 11:45–12:00, BEY 81
High and low density quantum dot arrays grown on pre-patterned surfaces — •Tino Pfau, Aleksander Gushterov, and Johann-Peter Reithmaier — Technische Physik, INA, Universität Kassel, Heinrich–Plett-Str. 40, 34132 Kassel
Surface templates with nanoscale dimensions are developed for GaAs substrates based on electron beam lithography and wet-chemical etching in order to control the quantum dot position and to reduce the statistical size distribution of the dots in a self-assembled dot formation process. In comparison to dry etching, wet chemical etching avoids crystal damage and defect related non-radiative recombination processes should play a much smaller role. GaAs-templates with a hole density from 107 to 1010 cm−2 were overgrown by InAs to form quantum dots at the hole positions and characterized by scanning electron microscopy(SEM), atomic force microscopy(AFM) and photoluminescence measurements.