HL 49: Quantum dots: preparation and characterization
Friday, March 27, 2009, 10:15–12:45, BEY 81
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10:15 |
HL 49.1 |
Growth and characterization of InP quantum dots deposited on InAs seed layer — •Daniel Richter, Robert Roßbach, Wolfang-Michael Schulz, Matthias Reischle, Claus Hermannstädter, Michael Jetter, and Peter Michler
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10:30 |
HL 49.2 |
Growth of InAs Quantum Dots on Silicon substrates: Formation and Characterization — •Tariq Al-Zoubi, Emil-Mihai Pavelescu, and Johann Peter Reithmaier
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10:45 |
HL 49.3 |
Strain and critical thickness of the 2D→3D transition during GaSb/GaAs quantum dot growth — •Holger Eisele, Rainer Timm, Andrea Lenz, Lena Ivanova, and Mario Dähne
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11:00 |
HL 49.4 |
Electric field control of vertically tunnel coupled InP quantum dots — •Elisabeth Koroknay, Wolfgang-Michael Schulz, Robert Roßbach, Michael Jetter, and Peter Michler
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11:15 |
HL 49.5 |
Structure of InAs/InGaAsP/InP Quantum Dots/Dashes — •Florian Genz, Andrea Lenz, Lena Ivanova, Rainer Timm, Udo W. Pohl, Dieter Franke, Harald Künzel, Holger Eisele, and Mario Dähne
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11:30 |
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15 min. break
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11:45 |
HL 49.6 |
High and low density quantum dot arrays grown on pre-patterned surfaces — •Tino Pfau, Aleksander Gushterov, and Johann-Peter Reithmaier
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12:00 |
HL 49.7 |
Shape of InN quantum dots and nanostructures grown by MOVPE — •S. Ploch, Ch. Meissner, M. Pristovsek, and M. Kneissl
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12:15 |
HL 49.8 |
Volmer-Weber growth of InN quantum dots by MOVPE — •Christian Meißner, Simon Ploch, Markus Pristovsek, and Michael Kneissl
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12:30 |
HL 49.9 |
The role of the spin-orbit interaction on the exchange coupling in lateral coupled quantum dots — •Fabio Baruffa, Peter Stano, and Jaroslav Fabian
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