Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 5: Photovoltaic
HL 5.2: Talk
Monday, March 23, 2009, 10:30–10:45, POT 151
Diffusion processes and chemical changes at the (Zn,Mg)O/ CuIn(S,Se)2 interface caused by RF magnetron sputtering deposition — •Felix Erfurth1, Benjamin Hußmann1, Lothar Weinhardt1, Achim Schöll1, Friedrich Reinert1, Eberhard Umbach1,2, Thomas Niesen3, Jörg Palm3, Sven Visbeck3, Alexander Grimm4, Iver Lauermann4, and Reiner Klenk4 — 1Universität Würzburg, Experimentelle Physik II, 97074 Würzburg — 2Forschungszentrum Karlsruhe GmbH, 76133 Karlsruhe — 3Avancis GmbH & Co. KG, 81739 München — 4Helmholtz Zentrum Berlin für Materialien und Energie, 14109 Berlin
(Zn,Mg)O buffer layers on Cu(In,Ga)(S,Se)2 thin film solar cells are a promising alternative to CdS buffer layers. Although in the past the radio frequency magnetron sputtering deposition on (Zn,Mg)O has been empirically optimized to reach high efficiencies, only little is known about the influence of the sputter parameters on the electronic and chemical structure of the absorber/buffer interface. We have used in-situ X-ray Photoelectron Spectroscopy (XPS) and X-ray induced Auger Electron Spectroscopy (XAES) to analyze the influence of different sputter parameters and to compare samples prepared by different groups.
All samples show the formation of indium oxide and zinc - sulfur/selenide bonds at the buffer/absorber interface. Moreover, the hydroxide/oxide ratio at the interface is strongly increased as compared to the respective ratio in the bulk. Further studies showed a diffusion of sodium to the surface for thin (Zn,Mg)O layers.