Dresden 2009 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 5: Photovoltaic
HL 5.7: Talk
Monday, March 23, 2009, 12:00–12:15, POT 151
Silicon nitride passivation of phosphorus highly doped emitters for p-type silicon solar cells — •Kamal Katkhouda1,2, Karsten Meyer1, Kevin Lauer3,2, Roman Petres4, Sviatoslav Shokhovets2, and Gerhard Gobsch2 — 1ersol Solar Energy AG, Wilhelm-Wolff-Str. 23, 99099 Erfurt, Germany — 2TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany — 4ISC International Solar Energy Research Centre Konstanz, Rudolf-Diesel-Str. 15, 78467 Konstanz, Germany
Solar cell passivation has always been an attractive topic for photovoltaic researches as this can enhance the performance of the solar cell remarkably. For a solar cell fabricated on p-type silicon it is necessary to achieve a good passivation on a phosphorus highly doped emitter. Silicon dangling bonds saturation and the field effect induced by built-in charge in the passivation-layer are the two well-known passivation effects on silicon surfaces. Some commonly used passivation layers, like SiO2 and SiNx, result in a positive built-in charge while others, e.g. Al2O3, produce a negative charge. Our main focus in this work are SiNx passivation films which were deposited by plasma enhanced chemical vapor deposition (PECVD) technique on different phosphorus highly doped emitter under varying gas flux ratio of silane and ammonia in the PECVD chamber. Optical properties of the films were characterized by spectroscopic ellipsometry while their passivation quality was studied by means of emitter saturation current measurement.