Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 52: Organic semiconductors II

HL 52.5: Vortrag

Freitag, 27. März 2009, 11:30–11:45, POT 51

Ambipolar organic/inorganic field effect transistor — •Maria S Hammer¹, Daniel Rauh², Carsten Deibel¹, and Vladimir Dyakonov^1,2 — ¹Julius-Maximilians-University of Würzburg, Institute of Physics, Experimental Physics VI, D-97074 Würzburg — ²Bavarian Centre for Applied Energy Research e.V. (ZAE Bayern), D-97074 Würzburg

In order to attain flexible electronic devices, the fabrication of complementary metal-oxide-semiconductor inverters based on soluble semiconductors offers an attractive potential for realizing printable logic circuits. One approach is an organic/inorganic bulk heterojunction system. Using an inorganic material offers the possibility of setting up its transport properties namely mobility, conductivity and charge carrier density via doping and adjusting it to an optimum for the combined performance with the organic material. Therefore we chose aluminium doped zinc oxide nanoparticles as the n-type and rr-poly(3-hexylthiophene) (P3HT) as the p-type component. Our field effect transistor measurements on the pristine and blended materials allow the determination of charge carrier mobility in dependence of the accumulated charge carrier densities and temperature. We survey the properties of the transport in disordered systems, organic and inorganic, with respect to the morphology of the film. We show that by doping zinc oxide nanoparticles it is possible to adjust a balanced electron and hole transport in the hybrid material which is indispensable for the performance of an ambipolar transistor.