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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.109: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Fabrication and characterization of red AlGaInP-VECSEL — •Thomas Schwarzbäck, Marcus Eichfelder, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funkionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Vertical-external-cavity surface-emitting lasers (VECSELs) have attracted a wide range of applications in biophotonics, television or projectors and spectroscopy. Here VECSELs overcome the disadvantages of common high-power edge-emitting semiconductor lasers which often suffer under insufficient beam quality and catastrophic optical mirror damage. With usage of external cavities and optical pumping VECSELs achieve high continuous-wave output power and near-diffraction-limited beam quality with a TEM₀₀ Gaussian beam profile.

We present a fully operating VECSEL system based on a multi-quantum-well structure of the chip with compressively-strained GaInP quantum wells within Al_0.55GaInP barriers on an Al_0.50GaAs/AlAs distributed Bragg reflector for an operation wavelength of around 660 nm. With simulations based on a transfer-matrix method we produced a resonant periodic gain design of the chip-cavity. The laser system is actively cooled by thermo-electric cooling and key parameters of this laser system were investigated intensively.

After optimization of the VECSEL structure and set-up a future prospective could be frequency-doubling to enter the UV spectral range.