Dresden 2009 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.17: Poster
Monday, March 23, 2009, 14:30–17:00, P2
Optical Selection Rules in Silicon — •Hauke Horn, Jens Hübner, and Michael Oestreich — Institute for Solid State Physics, Leibniz University Hannover, Appelstr. 2, 30167 Hannover, Germany
We use selective optical excitation around the direct band gap of silicon at room temperature and polarization resolved detection of the photoluminescence from the indirect band gap transition to probe the optical spin selection rules in this important semiconductor material. The degree of circular polarization from the indirect transition is monitored, while the excitation from the top most valence band Γ8+ to the lowest conduction band Γ6− at the center of the Brillouin zone is tuned to the excitation from the split-off band Γ7+. To shorten the carrier lifetime to less than the spin relaxation time a biased silicon photodiode is used as sample.