Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.18: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Process conditions for doping with Spin On dopants — •Sebastian Stoll, Peter Iskra, Helmut Lochner, Dorota Kulaga-Egger, Torsten Sulima, and Ignaz Eisele — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg

The use of spin on dopants (SOD) as a way of doping in place of ion implantation has become more important over the past years. The advantages of SOD are reduced costs and the avoidance of crystal lattice damages compared to ion implantation. SOD can be applied on the wafer by using standard photo resist equipment. The dopant produces a doped silicate film, acting as an unlimited diffusion source. By the use of a suitable diffusion process and film thickness, the sheet resistance can easily be adjusted.

First we investigated the standard procedure to apply the SOD on the wafer, known from publications. We optimized the procedure achieving a defect free and homogenous film of the SOD. Furthermore we analysed the dopant concentration and the sheet resistance after diffusion process at different temperatures. Investigations were carried out by SIMS, SEM and four-point measurements.

Finally, n- und p- MOSFETs were fabricated and characterised.