Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.19: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Investigation of defect and phosphorus related states in very thin films of µc-Si — •Konrad Klein¹, Martin Eberl¹, Benedikt Stoib¹, Andre R. Stegner¹, Oleksandr Ashtakov², Friedhelm Finger², Martin Stutzmann¹, and Martin S. Brandt¹ — ¹Walter Schottky Institut, Am Coulombwall 3, 85748 Garching — ²Forschungszentrum Jülich, 52425 Jülich

Although very thin µc-Si films with a thickness of a few ten nanometers are used as p- and n-type layers in µc-Si thin film solar cells, only the defect and doping induced states of thick films with a thickness of several hundred nanometers have been studied systematically with Electron Spin Resonance (ESR) and Electrically Detected Magnetic Resonance (EDMR) [1,2]. Since it is known that film properties change with the thickness [3], we have investigated the paramagnetic states of 20 nm thin films of phosphorus-doped µc-Si with various doping concentrations using EDMR. The results show defect and donor related states, which are already known from thicker films, as well as two new broad paramagnetic resonances at g ≈ 2.034 and g ≈ 1.984. We discuss possible origins of these lines comparing the results with those obtained for phosphorus-doped crystalline silicon, silicon nanocrystals and recent results obtained with pulsed EDMR for µc-Si thin film solar cells [4]. [1] J. Mueller et al., Physical Review B, 60, 11666 (1999) [2] K. Lips et al., Solar Energy Materials and Solar Cells, 78, 513 (2003) [3] M. Tzolov et al., Journal of Applied Physics, 81, 7376 (1997) [4] J. Behrends et al., Journal of Non-Crystalline Solids, 354, 2411 (2008)