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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.20: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Morphological properties of three dimensional Ge nanoclusters grown on SiO_x (x<2) films — •Zakir Seyidov¹, Maria Rubezhanska², Christian Hofer¹, Yuri Kozyrev², Christian Teichert¹, and Anton Naumovets³ — ¹Institute of Physics, Montanuniversitaet Leoben, Franz Josef Str. 18, A-8700 Leoben, Austria — ²Institute of Surface Chemistry, Generala Naumova Str. 17, UA-03164 Kiev, Ukraine — ³Institute of Physics, Prospect Nauki 46, UA-03028 Kiev, Ukraine

Novel optoelectronic and nanoelectronic devices require smaller and smaller size of their components. This explains the interest in Ge nanostructure formation in an SiO₂ matrix. A possibility of epitaxial formation of such Ge nanostructures on initial amorphous SiO_x (x<2) films is considered. Their surface was investigated using atomic-force microscopy. The height, size and distribution density of germanium nanoislands of the resultant film were determined. Ge nanoclusters were about 1-3 nm in height and 10-25 nm in the basis for the initial and intermediate stages of their formation with very low distribution density about 5 10⁸ cm⁻². For other samples [1], Ge nanoclusters grew larger: about 20 nm in height and 30 nm in the basis. Their distribution density over the substrate surface exceeded 10¹¹ cm⁻². Characteristics of the formed nanostructure at the different formation stages were shown both doped (Sb, B) and undoped films. This research was supported by ÖAD Project UA No 2007/05.

[1]Yu.N.Kozyrev et al., Proceedings of ICTF14&RSD2008 p.76