Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.21: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Optical and electrical characterization of silicon nanowires etched from highly doped silicon wafers — •Pratyush Das Kanungo, Nadine Geyer, Vadim Talalaev, Oussama Moutanabbir, Nikolai Zakharov, Ren Bin Yang, Peter Werner, and Ulrich Gösele — Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany

Metal assisted catalytic etching of silicon nanowires (Si NWs) from silicon wafers is one of the most popular *top-down* approaches in nanotechnology. In order to use these NWs as future nano-devices, extensive investigations of the optical and electrical properties of them are required. We report on the optical and electrical characterization of Si NWs etched from highly doped (0.001 to 0.006 Ω-cm) n-type (111) Si wafers by an aqueous solution of HF and silver nitrate. Room temperature, as well as low temperature photoluminescence of the Si NWs, separated from the original silicon substrate and dispersed on a GaAs substrate, showed significant blue-shift and broadening of the silicon peak at silicon band gap as compared to the silicon substrate. Room temperature Raman spectra of the same sample showed a red shift and broadening of the principal Si-Si peak compared to the silicon substrate. Electrical measurement of individual NWs with Pt-Si contacts fabricated by electron beam lithography showed the expected electrical conductivity.