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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.22: Poster

Montag, 23. März 2009, 14:30–17:00, P2

MOVPE of semipolar GaN on m-plane sapphire — •M. Frentrup¹, S. Ploch¹, M. Pristovsek¹ und M. Kneissl^1,2 — ¹TU Berlin, EW 6-1,Institut für Festkörperphysik, Hardenbergstr.36, 10623 Berlin, Germany — ²Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str.4, 12489 Berlin, Germany

InGaN multiple quantum well (MQW) light emitting diodes on c-plane GaN suffer piezoelectric and spontaneous polarization effects. These effects lead to the well known quantum confined stark effect (QCSE), which causes a reduction of the radiative recombination efficiency. Theoretical calculations have predicted that for certain semi-polar surfaces a strong reduction of the QCSE can be expected. Possible candidates for semi-polar surfaces are e.g. the {1011}, {2112} and {1013}. We have investigated the growth of semi-polar GaN on (1010) sapphire (m-plane) with metal organic vapor phase epitaxy (MOVPE). The epitaxy of nitrides on sapphire consists of three different steps - nitridation, nucleation, and buffer growth. The surface temperature for the different steps, especially for the nitridation was varied in the range between 530^∘C and 1100^∘C. We have also varied the nucleation temperature between 500^∘C and 700^∘C. The GaN growth was characterized by in-situ spectral reflectance and wafer curvature. The samples were characterized ex-situ by X-ray diffraction, AFM and photoluminescence.