Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.26: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Optical study of Rare earth ion implantation in GaN heterostructures — •JAYANTA KUMAR MISHRA, UWE ROSSOW, and ANDREAS HANGLEITER — INTITUTE OF APPLIED PHYSICS, UNIVERSITY OF BRAUNSCHWEIG,MENDELSSOHNSTRASSE 2,38106,BRAUNSCHWEIG.

Rare earth ion implanted GaN or AlGaN is a very promising material to be utilized for light emitting devices. When rare earth ions are used for that purpose, the implanted GaN shows photoluminescence in the visible range (480-650nm)[1]. We investigate the use of AlGaN/GaN/AlGaN heterostructures for the purpose of implantation. Based on the results of TRIM simulations, we choose a primary ion energy of 100 keV for Europium ion implantation.The dose and projected range are 1014cm-2 and 42 nm respectively. We have varied both the thickness of the GaN layer as well as the composition of the AlGaN cladding layers and studied the influence on Eu3+ luminescence properties.

1.J. H. Park and A.J.Steckl,APPLIED PHYSICS LETTERS 88,011111 ,2006.