Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.33: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Carbon doped InGaAs/InAlAs heterostructures on relaxed buffer layers — •Marika Kubová, Katharina Schulze, Dieter Schuh, and Werner Wegscheider — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D 93040 Regensburg, Germany

The InAlAs/InGaAs heterostructures with high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Landé g-factor (around 15 in InAs), large Rashba effect and low Schottky barrier to evaporated metals. We grow InGaAs/InAlAs/InAs heterostructures using a step-graded metamorphic buffer layer on GaAs (001) substrates via molecular beam epitaxy. In order to obtain 2DEGs or 2DHGs, these structures have been grown either undoped [1] or remote doped with Si [2] and Mn [3]. Here we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. The magnetotransport measurements on these samples at low temperatures show a change of the conductivity from p-type to n-type via illumination and weak localisation at low magnetic fields.

[1] F. Capotondi, G. Biasiol, I. Vobornik, L. Sorba, F. Giazotto, A. Cavallini, B. Fraboni, J. Vac. Sci. Technol. B 22, 702 (2004)

[2] A. Richter, M. Koch, T. Matsuyama, Ch. Heyn, U. Merkt, Appl. Phys. Lett. 77 (20) 3227, (2000)

[3] U. Wurstbauer, I. Gronwald, U. Stöberl, A. Vogl, D. Schuh, D. Weiss, W. Wegscheider, Physica E 40, 1563 (2008)