Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.41: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Growth of InAs quantum dots on hydrogen cleaned GaAs surfaces — •Ahish Kumar Rai, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik Ruhr-Universität Bochum Universitätsstraße 150, Gebäude NB,D-44780 Bochum,Germany

The goal of this work is to introduce site-selective growth of InAs quantum dots on ex-situ patterned GaAs layers. A key step in this process is the cleaning on the surface after patterning. We will report on cleaning by atomic hydrogen. The surface was as exposed to air and chemicals like photo resist. After striping and cleaning, InAs quantum dots have been grown followed by a GaAs cap layer. The quality of the cleaning process is evaluated by measuring the quantum dot photo luminescence, which is very sensitive to surface contaminations. We will discuss the influence of various parameters e.g. the substrate temperature during cleaning.