Dresden 2009 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.44: Poster
Monday, March 23, 2009, 14:30–17:00, P2
Magnetism in manganese modulation-doped two-dimensional hole systems — •Wolfgang Krenner1,4, Benedikt Rupprecht1, Tjark Windisch1, Ursula Wurstbauer2,3, Marc Wilde1, Werner Wegscheider2, and Dirk Grundler1 — 1Physik Department E10, TU München, James-Franck Str. 1, 85748 Garching — 2Institut für Angewandte und Experimentelle Physik II, Universität Regensburg, Universitätsstr. 31, 93040 Regensburg — 3Current address: Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg — 4Current address: Physik Department E20, TU München
Diluted magnetic semiconductors on the one hand and two-dimensional carrier systems with strong spin-orbit-coupling on the other hand have been of increasing interest over the past few years. Here we present magnetization measurements on a Mn-modulation doped InGaAs/InAs quantum well at 400 mK in external magnetic fields of up to 15 T. For the measurements a Micromechanical Cantilever Magnetometer (MCM) mounted on a rotational stage was employed. This allows the variation of the tilt angle between the sample magnetization and the external magnetic field.
The measurements show a fourfold anisotropy and a hysteretic behavior of the magnetization around B=0. This may be associated with the coupling of the free holes to the magnetic moments of the Mn dopants. An oscillatory behavior that was observed in high magnetic fields could be interpreted as the de Haas-van Alphen effect of the free holes.
We thank the DFG for funding via project GR1640/3 in SPP 1285.