Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.53: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Investigation of physical damage in artificially structured Al_xZn_1−xO and ZnO thin layers, respectively — •Markus Piechotka¹, Torsten Henning¹, Martin Eickhoff¹, Peter J. Klar¹, Bernd Szyszka², and Thomas Wassner³ — ¹JLU Giessen, Germany — ²IST Braunschweig, Germany — ³WSI Munich, Germany

The Al_xZn_1−xO films were grown by magnetron RF-sputtering whereas the ZnO films were grown epitaxially using plasma assisted MBE. The layers were artificially structured into arrays of similar wires using photolithography followed by an etching step. The wire diameters were varied between 4 and 1000 µm. Chemical wet etching using a H₃PO₄−HAc−H₂O-mixture and radio frequency ion thruster based ion beam etching, respectively, is used to transfer the pattern into the thin films. The structural properties of the wire edges were analyzed by atomic force microscopy. The influence of the etching induced damage as well as surface effects due to varying surface-to-bulk-ratio on the electronic properties were studied by resistance measurements in the temperature range from 2 to 300 K and in magnetic fields between 0 and 10 T.