Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.54: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Nitrogen doping of RF-sputtered Cu_xO samples investigated by Raman spectroscopy — •David Hartung, Swen Graubner, Bruno K. Meyer, and Peter J. Klar — Institute of Experimental Physics I, Justus-Liebig University Gießen, Germany

A series of Cu_xO layers of about 300 nm thickness was grown by RF-sputtering on glass-substrates. Nitrogen gas was used for doping in the sputter process. For the different samples the nitrogen flow varied between 0.2 and 4 sccm. In order to determine the influence of nitrogen on the structural properties, the samples were investigated by Raman spectroscopy. For excitation of the samples three different laser-wavelengths were used, a HeNe- (633 nm), a frequency-doubled Nd:YAG- (532 nm) and a HeCd-laser (325 nm). The resulting Raman spectra shed light on the question whether and how the nitrogen is incorporated and its influence on the Cu_xO crystalline structure.