Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.55: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Thermoelectric measurements on artificially structured ZnO/ZnS bars — •Gert Homm, Torsten Henning, Bruno K. Meyer, and Peter J. Klar — Institute of Experimental Physics I, Justus-Liebig-University Gießen, Gemany

ZnO layers of about 700 nm thickness were grown by RF Sputtering on glass substrates. The layers are n-type with electron concentrations of about 10²¹ cm⁻³. Arrays of the as grown samples were artificially structured by photolithography. The patterns consist of regular arrays of bars with different spacings and bar width. The bars can be arranged in different angles with respect to the temperature gradient applied in the measurement. The patterns were transferred by wet-chemical etching. In a second sputter process a thin layer (500 nm) of ZnS was grown on the structured array to achieve the ZnO/ZnS bar structure. The Seebeck coefficient is measured in the temperature range from 50 to 300 K. The influence of the artificial structuring and the orientation of the wires with respect to the temperature gradient on the Seebeck coefficient is discussed.