Dresden 2009 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.60: Poster

Monday, March 23, 2009, 14:30–17:00, P2

Temperature dependent incorporation and thermal stability of hydrogen in zinc oxide layers — •Marc K. Dietrich, Achim Kronenberger, Andreas Laufer, Sebastian Zöller, Angelika Polity, and Bruno K. Meyer — I. Physikalisches Institut Justus Liebig Universität Gießen, Germany

Hydrogen-doped zinc oxide films (ZnO:H) were deposited on c-axis sapphire by radio frequency magnetron sputtering. An argon-hydrogen gas mixture was used as sputtering gas. At first we investigated the influence of substrate temperature on the incorporation of hydrogen. Hydrogen-doped zinc oxide films deposited at room temperature had a carrier density of about 10²⁰ cm⁻³. Hydrogen diffusion has been observed by annealing those films at high temperatures in a nitrogen atmosphere. In the experiments the annealing temperature as well as the annealing time has been varied.

The hydrogen incorporation in the zinc oxide film was verified by secondary ion mass spectrometry. X-ray diffraction measurements showed that the lattice spacing of c-axis in zinc oxide increased at higher hydrogen concentrations.