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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.62: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Critical thickness of ZnMnSe spin aligner layers on GaAs — •B. Westenfelder, R. Dörlich, P. Asshoff, D. Z. Hu, D. M. Schaadt, H. Kalt, and M. Hetterich — Institut für Angewandte Physik, Universität Karlsruhe (TH), and DFG Center for Functional Nanostructures, CFN, D-76128 Karlsruhe

The diluted magnetic semiconductor ZnMnSe proved to be an efficient spin aligner in quantum dot spin-injection light-emitting diodes, where polarization degrees close to 100% were demonstrated. Since the minimization of spin scattering is crucial for high-fidelity spin-injection, the spin aligner should have a high epitaxial quality. Within this context, the critical thickness of the ZnMnSe layer is of importance - beyond the critical thickness, misfit dislocations are produced and strain relaxation occurs. To determine the critical thickness of ZnMnSe with different Mn concentrations, we grew suitable epilayers on GaAs(001) and analyzed them by x-ray diffraction techniques. As expected, we observed that the critical thickness of ZnMnSe is reduced when Mn is incorporated. The results obtained will be presented and compared with different theoretical models.