Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.64: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Raman Spectroscopy on Lithium Doped ZnO Nanocrystals — •Ronny Kirste¹, Yilmaz Aksu², Markus R. Wagner¹, Surajit Jana², Gordon Callsen¹, Matthias Driess², and Axel Hoffmann¹ — ¹TU Berlin, Institute of Solid State Physics, Berlin — ²TU Berlin, Institute of Chemistry: Metalorganics and Inorganic Materials, Berlin

ZnO still receives much attention due to its possible application for field emission displays, high frequency electronic devices, short wavelength lasers or light emitting diodes. But there is still a lack of knowledge in terms of p-doping of ZnO. Over the past years, Lithium revealed to be a good candidate for shallow acceptors. So far ZnO:Li has been investigated by many methods in different groups. However, there is only little knowledge about the influence of Li doping to the vibrational properties of ZnO. Recently Yadav et al. (JAP 104, 053507) reported about low energy Raman modes below 200 1/cm and a high energy mode around 1090 1/cm. They attributed them to zone boundary phonons and a resonant second order mode, respectively. In this contribution a detailed analysis of these Raman modes in ZnO:Li nanocrystals with different Li incorporation will be presented. We will show that these modes already appear at very low Li concentrations. According to the 1090 1/cm line, a dependence of the intensity on the Li incorporation can be seen. Furthermore excitation dependant Raman measurements will be presented. To complete our investigations photoluminescence measurements have been performed. Thereby no dependency between exciton energy and Li incorporation can be seen.