Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.66: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Catalytic growth of ZnO nanowires via chemical vapor deposition — •Sebastian Eisermann, Stefan Lautenschläger, Torsten Henning, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen

Zinc oxide nanowires were synthesized on silicon via a catalytically activated vapor-liquid-solid process governed by chemical vapor deposition. On the silicon substrates, square two dimensional arrays of equally spaced gold nanodots with diameters of approximately 100 nm were structured via electron beam lithography and acted as catalysts. The structural properties of the nanowires were investigated via X-ray diffraction (XRD) and scanning electron microscope (SEM) measurements. Raman measurements were performed to examine the lattice dynamics. The optical characteristics were checked with photoluminescence (PL) and cathodoluminescence (CL) analysis.